Daniele Ercolani

Biography

Daniele Ercolani Graduates in Physics in Università degli Stusi di Trieste with a thesis on nanostructure fabrication and chatachterization with local anodic oxydation in the year 2003. He also obtained the PhD degree at Università di Modena e Reggio Emilia with a thesis on "Transport properties of InGaAs based devices" in the year 2007. He holds a position of research engineer at the Scuola Normale Superiore in Pisa, focusing mainly in III-V nanowire growth by CBE, and the use of nanowires for device nanofabrication for electrical and optical measurements in the year 2007. He had authored more than 40 articles in refereed international journals.

Research Interest

Growth of of III-V nanowires by Chemical Beam Epitaxy using all-metalorganic gas sources. Focusing in particular on InAs, InAs/InP heterostructures, InSb, InAsSb alloys, GaAs, GaAs/AlAs heterostructures, AlAs, GaP. Characterization of the grown NWs in house by electron microscopies (SEM, TEM, EDX, STEM, ...). In house use of the grown NWs as building blocks for nanofabricated (mainly through EBL) devices for electrical and optical measurements, also at cryogenic temperatures. More extensive NW and device characterization is possible through external collaborations with research groups and facilities around the world (Raman, TEM, XRD, theoretical groups). A large share of my time is devoted to training and education of students, post-docs and researchers in the use of NEST experimental facilities, from growth apparati to lithography facilites, mK cryostats, etc.