Baozhu Wang
professor
Information Science and Engineering
Hebei Normal University of Science and Technology
China
Biography
Baozhu Wang received the B.S. and the M.S. degrees from Hebei University, Baoding, China, in 2001 and 2004, the Ph.D. degree from Institute of Semiconductor, Chinese Academy of Science, Beijing, China, in 2007, respectively. In 2009 summer, he was going to University of Salford, the United Kingdom, for bilingual teaching training. From 2012 to 2013, he was a visiting scholar in the Department of Electrical and Computer Engineering at University of North Carolina, Charlotte, NC, United States. Dr. Wang joined the School of Information Science and Engineering, Hebei University Science and Technology as a lecture in 2007. Currently, he is an associate professor in Department of Electric Information Engineering, School of Information Science and Engineering.
Research Interest
His research interests are broadly in the area of semiconductor materials and devices. The areas of special interests include Epitaxial growth and characterization of GaN-based compound semiconductor materials and nano structure Fabrication and theoretical simulation of semiconductor devices, especially for LED and solar cell Applications of high power LED for lighting and UV-LED for sterilization
Publications
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Yu, W; Wang, BZ; Lu, WB; Yang, YB; Han, L; Fu, GS; Growth of nanocrystalline silicon films by helicon wave plasma chemical vapour deposition, CHINESE PHYSICS LETTERS, 21 (7): 1320-1322, 2004 (Journal paper, SCI)
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Wei, Y; Wang, BZ; Yang, YB; Optical emission diagnosis of helicon-wave-plasma-enhanced chemical vapor deposition of nanocrystalline silicon, ACTA PHYSICA SINICA, 54 (5): 2394-2398, 2005 (Journal paper, SCI)
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Wang, Baozhu; Wang, Xiaoliang; Wang, Xiaoyan; Wang, Xinhua; Guo,Lunchun; Xiao, Hongling; Wang, Junxi; Liu, Hongxin; Zeng, Yiping; Li, Jinmin, RF-MBE growth of InAlGaN epilayer on sapphire substrate, Chinese Journal of Semiconductors, v 27, n 8, p 1382-1385, 2006 (Journal paper, Ei)
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Baozhu, Wang; Xiaoliang, Wang; Huanming, Wen; Ruihong, Wu; Guoxin, Hu; Junxue, Ran; Hongling, Xiao, Structural and optical properties of InGaN/GaN multiple quantum wells structure for ultraviolet emission, Proceedings of SPIE - The International Society for Optical Engineering, v 6782, 2007 (Conferences paper, Ei)
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Wang, BZ; Wang, XL; Hu, GX; Ran, JX;Wang, XH; Guo, LC Xiao, HL; Li, JP; Zeng,YP; Li, JM; Wang, ZG; Growth and annealing study of Mg-doped AlGaN and GaN/AlGaN superlattices, CHINESE PHYSICS LETTERS, 23 (8): 2187-2189 2006 (Journal paper, SCI)
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Wang, BZ; Wang, XL; Wang, XY; Guo, LC; Wang, XH; Xiao, HL; Liu, HX; The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 40 (3): 765-768 2007 (Journal paper, SCI)
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Wang, Baozhu; An, Shengbiao; Wen, Huanming; Wu, Ruihong; Wang, Xiaojun; Wang, Xiaoliang, Thermal annealing effect on the Mg doped AlGaN/GaN superlattice, Proceedings of SPIE - The International Society for Optical Engineering, v 7631, 2009(Conferences paper, Ei)
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Wang, Bao-Zhu; An, Sheng-Biao; Wen, Huan-Ming; Wu, Rui-Hong; Wang, Xiao-Jun; Wang, Xiao-Liang, The structural and optical properties of Al0.48Ga0.52N/ Al0.54Ga0.36N MQWs gown by MOCVD, GuangdianziJiguang/Journal of Optoelectronics Laser, v 20, n 11, p 1454-1457, 2009 (Journal paper, Ei)
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Wang, Bao-Zhu; Wang, Xiao-Liang, Epitaxial growth of AlInGaN quaternary alloys by RF-MBE, Journal of Inorganic Materials, v 24, n 3, p 559-562, 2009 (Journal paper, SCI)
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Wang, Bao-Zhu; Yan Cui-Ying; Wang Xiao-Liang, Microstructures and Optical Characteristics of InGaN quantum dots grown by MBE, Rare Metal Materials and Engineering, v40,n 11, p2030-2032, 2011(Journal paper, SCI)
