Chunhua Qi
phD
Department of Electrical Engineering
Institute of Technology, Harbin
China
Biography
Chunhua Qi is a phD scholar in the Department of Computer Science and Engineering at Harbin Institute of Technology
Research Interest
Engineering Physics, Electronic Engineering, Electrical Engineering
Publications
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Low cost and highly reliable radiation hardened latch design in 65 nm CMOS technology
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A Highly Reliable Memory Cell Design Combined With Layout-Level Approach to Tolerant Single-Event Upsets
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Heavy Ion Induced SEU Sensitivity Evaluation of 3D Integrated SRAMs
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A 13T radiation-hardened memory cell for low-voltage operation and ultra-low power space applications
