Hai Lu
Professor
Department of Physics
Laboratory of Solid State Microstructure, Nanjing University
China
Biography
Dr. Lu received his BS and MS in physics from Nanjing University in 1992 and 1996 respectively. He studied in the Compound Semiconductor Device Group of Cornell University under the supervision of Prof. Lester Eastman from 1999-2004. After received his PhD degree in electrical engineering, he worked as a lead professional engineer at GE Global Research Center (NY) from 2004-2006. He joined Nanjing University in 2006 and has been a full professor in microelectronics since then. He is also a principle investigator (PI) of Nanjing National Lab of Microstructures. Dr. Lu has done pioneering work on III-nitride semiconductors and devices by playing a key role on nearly all major discoveries of InN and In-rich nitrides since 2000, including the narrow bandgap and surface charge accumulation of InN. His publications have been cited by peer researchers worldwide for 4500+ times with a H-index of 38.
Research Interest
Device physics of III-nitride-based power devices, microwave power devices and UV opto-devices
Publications
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Huang X, Wu C, Lu H, Ren F, Chen D, Zhang R, Zheng Y. Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO: N layer. Applied Physics Letters. 2013 May 13;102(19):193505.
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Huang X, Wu C, Lu H, Ren F, Xu Q, Ou H, Zhang R, Zheng Y. Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illumination. Applied Physics Letters. 2012 Jun 11;100(24):243505.
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Yan D, Lu H, Chen D, Zhang R, Zheng Y. Forward tunneling current in GaN-based blue light-emitting diodes. Applied Physics Letters. 2010 Feb 22;96(8):083504.
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Yan D, Lu H, Cao D, Chen D, Zhang R, Zheng Y. On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors. Applied Physics Letters. 2010 Oct 11;97(15):153503.
