Shulin Gu
Professor
Department of Physics
Laboratory of Solid State Microstructure, Nanjing University
China
Biography
Jan. 1993 - Mar. 1995 Ph.D. from Department of Physics, Nanjing University, China. Sep. 1983 - July. 1990 B. S. and M. S. from Department of Physics , Nanjing University, China.
Research Interest
Wide bandgap semiconductors (ZnO and GaN) material growth, characterization, physcics and device applications.
Publications
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Tang K, Gu S, Zhu S, Liu W, Ye J, Zhu J, Zhang R, Zheng Y, Sun X. Carbon clusters in N-doped ZnO by metal-organic chemical vapor deposition. Applied Physics Letters. 2008 Sep 29;93(13):132107.
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Tang K, Gu S, Zhu S, Liu J, Chen H, Ye J, Zhang R, Zheng Y. Suppression of compensation from nitrogen and carbon related defects for p-type N-doped ZnO. Applied Physics Letters. 2009 Nov 9;95(19):192106.
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Liu W, Gu SL, Ye JD, Zhu SM, Liu SM, Zhou X, Zhang R, Shi Y, Zheng YD, Hang Y, Zhang CL. Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique. Applied physics letters. 2006 Feb 27;88(9):092101.
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Ye JD, Gu SL, Zhu SM, Liu SM, Zheng YD, Zhang R, Shi Y. Fermi-level band filling and band-gap renormalization in Ga-doped ZnO. Applied Physics Letters. 2005 May 9;86(19):192111.
