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Zhongyuan Ma

Professor
Department of Physics
Laboratory of Solid State Microstructure, Nanjing University
China

Biography

Zhongyuan Ma is a professor and Ph.D.supervisor from School of Electronic Science and Engineering in Nanjing University. She got her Ph.D. degree of condensed matter physics from Nanjing University in 2002. Then she stayed in physics department of Nanjing University as a teacher. Her main research is devoted to two aspects: (1) the nanoelectronics and optoelectronics of low-dimensional Si-based semiconductor material; (2) the application of low-dimensional Si-based semiconductor material on new generation nonvolatile memory and light emission device. Recently nanocrystalline Si floating gate memory chip, Si-based resistive switching memory and plasma-enhanced high efficient light emission device have been achieved in her group. She has been to Ecole Polytechnique, Munich University of Technology Institute, Royal Institute of Technology and University of Hamburg to visit and study. Recently she has carried out the design and production of nanocrystalline Si floating gate memory chip by cooperating with SMICS and Wuxi China Resources Huajing Micro. Based on the CMOS fabrication process of SMICS, the first nanocrystalline Si floating gate memory chip with NOR function have been achieved with proprietary intellectual property of Nanjing University. The performance and stability of nanorcrystalline Si floating gate memory chip has reached the advanced level in the world. She has published over 100 papers and owned 15 issued patents. And her recent research was supported by State Key Program for Basic Research of China (“973”project), National Nature Science Foundation of China, the Research Fund for the Doctoral Program of Higher Education of China, Six talent peaks project in Jiangsu Province and Nature Science Foundation of Jiangsu Province.

Research Interest

(1)Controllable growth of low dimensional Si-based materialï¼› (2)Nanoelectronics and optoelectronics of low dimensional Si-based material (3)Plasmonics of low dimensional material (4)The optimization and design of core structure for nonvolatile memory Main Courses (1)The principle and application of solar cell (2)College Physics

Publications

  • Jiang,XF; Ma,ZY*; Yang,HF; Yu,J; Wang,W; Zhang, WP; Li,W; Xu,J; Xu,L; Chen, KJ. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers. JOURNAL OF APPLIED PHYSICS 116,123705(2014)

  • Ma,ZY*; Yan,MY; Jiang,XF; Yang,HF; Xia,GY; Ni,XD; Ling,T; Li,W; Xu,L; Chen,KJ. Strong blue light emission from a-SiNx:O films via localized surface plasmon enhancement. APPLIED PHYSICS LETTERS 101, 013106 (2012)

  • Ma,ZY*; Ni,XD; Zhang,WP; Jiang,XF; Yang,HF; Yu,J; Wang,W; Xu,L; Xu,J; Chen,KJ; Feng,D. Hexagonal Ag nanoarrays induced enhancement of blue light emission from amorphous oxidized silicon nitride via localized surface plasmon coupling. OPTICS EXPRESS 22,28180(2014)

  • Jiang,XF; Ma,ZY*; Xu,J; Chen, KJ; Xu,L; Li,W; Huang,XF; Feng,D. a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths. SCIENTIFIC REPORTS 5,15762(2015)

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