Liu Xiuxi

Biography

Liu Xiuxi, male, born in August 1940, Shandong plains, members of the Communist Party of China, in 1997, hired as a researcher. He has worked in the physics department for 6 years and has been engaged in semiconductor device manufacturing and microelectronic technology research for 32 years at the Institute of Semiconductors. Experienced laboratory, engineers, associate researchers and researchers, the book "semiconductor impurities source", "gallium diffusion technology" and other five, the paper "gallium diffusion model and doping effect analysis", "insulation protection materials application research" 46 , The national patent 5, bear (or participate in) the completion of the provincial scientific research project 6, "open pipe spread in the application of high voltage transistor research" won the provincial science and technology progress award (column 4), "aluminum gallium in the Thyristor in the application of research and "P-type double-doped in the fast thyristor in the application of research" were the provincial science and technology progress second prize (first), "SM insulation materials in the thyristor application research" by the provincial science and technology progress three First prize (first place). Because of the outstanding contribution of higher education and scientific research, since 1993, enjoy the special allowance of the State Council. Retired in 2000.

Research Interest

 Physics