Hanghui Chen
Assistant Professor
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Shanghai University
China
Biography
Hanghui Chen is an Assistant Professor of Physics, NYU Shanghai; Global Network Assistant Professor, NYU. Prior to joining NYU Shanghai, he was a post-doctoral fellow at Columbia University. He holds a Ph.D from Yale University and a B.S. from Peking University.
Research Interest
Professor Chen’s research interests include first-principles modelling and design of complex meta-materials, in particular transition metal oxide heterostructures; ab initio calculations of ground state and excited state properties of correlated systems; as well as method development in materials theory. His work has appeared in Phys. Rev. Lett., Nano Lett. and Advanced Materials.
Publications
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A. S. Disa, D. P. Kumah, A. Malashevich, H. Chen, D. A. Arena, E. D. Specht, S. Ismail-Beigi, F. J. Walker and C. H. Ahn, “Inter-elemental orbital tuning in oxidesâ€, Phys. Rev. Lett. 114, 026801 (2015).
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H. Chen, Q. Qiao, M. S. J. Marshall, A. B. Georgescu, A. Gulec, P. J. Phillips, R. F. Klie, F. J. Walker, C. H. Ahn and S. Ismail-Beigi, “Reversible modulation of orbital occupations via an interface-induced polar state in metallic manganitesâ€, Nano Lett. 14, 4965 (2014).
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H. Chen, A. J. Millis, and C. A. Marianetti, “Engineering Correlation Effects via Artificially Designed Oxide Superlatticesâ€, Phys. Rev. Lett. 111,116403 (2013)
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H. Chen, D. P. Kumah, A. S. Disa, F. J. Walker, C. H. Ahn, S. Ismail-Beigi, “Modifying the electronic orbitals of nickelate heterostructures via structural distortionsâ€, Phys. Rev. Lett. 110, 186402 (2013)
