Yu Hongyu
Deputy Director
Electrical and Electronic Engineering
South University of Science and Technology of China
China
Biography
Professor Yu Hongyu, the first batch of national "young people plan" selected, selected in Shenzhen Peacock plan, since 2011 in the Southern University of Science and Technology as a professor and deputy director. Professor received a bachelor's degree from Tsinghua University in 1999, a master's degree from the University of Toronto in 2001, a Ph.D. from the National University of Singapore in 2004, a senior researcher and project leader at IMEC in Leuven, Belgium, 2008-2011 Professor Yu Hongyu's main research work focused on the integrated circuit micro-nanoelectronic devices, including nano-scale CMOS devices and processes, new ultra-high density memory, silicon-based solar cells and other directions, to obtain the A series of innovative work. A total of 160 papers (of which 148 were included in SCI) were published by the authors of the first author / Correspondent in IEEE Electron Device Letters, Transaction on Electron Devices, Applied Physics Letters, Small, Scientific Reports and other academic journals. 80 articles, review articles 5 articles. Published more than 150 conference papers, including the first author / Correspondent identity in Symposia on VLSI Technology and International Electron Devices Meeting two international microelectronics field top academic conference published 14 papers. Published papers were cited nearly 3800 times, he cited> 3400 times, H factor 32 (SCI). Invited in Microelectronics Reliability, Crystals, etc. to write a special review, in the "Solid State Circuits Technologies", "Nonvolatile Memories: Materials, Devices and Applications "," Applied Nanotechnologies "," Energy Efficiency and Renewable Energy through Nanotechnology "4 chapters. Related results have been applied to the United States and the European patent 23, 10 domestic patents. Commitment to domestic and foreign research projects and talent plans nearly 20, the amount of funding more than 50 million yuan.
Research Interest
Gallium nitride power device and system integration (GaN power device and system integration ); Chip multilayer ceramic capacitors ( Multi-layer ceramic Capacitor ).
Publications
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Dong B, Lin J, Wang N, Jiang LL, Yu HY et al. (2016) Investigation of gate pulse induced interface trap behaviours and its relationship with threshold voltage instability in Algan/Gan-On-Si MIS-Hemts. International Conference on Advanced Electronic Science and Technology.
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Dong B, Lin J, Wang N, Jiang LL, Yu HY et al. (2016) Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement. Aip Advances 6: 450-1170.
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Wang H, Wang N, Jiang LL, Lin XP, Yu HY et al. (2017) A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates. Chinese Physics B 26: p047305.
