Prof. Eginligil Mustafa
professor
Institute of Advanced Materials
The Institute of Advanced Materials
China
Biography
Biographical Information 2010: PhD degree; Department of Physics, The State University of New York, University at Buffalo, Buffalo NY USA. 2010-2012: Research fellow; Electrical and Computer Engineering, National University of Singapore, Singapore. 2012-2015: Research fellow; School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore. 2015- : Professor; Institute of Advanced Materials, Nanjing Tech University, Nanjing, Jiangsu, China. Academic Achievements Prof. EGINLIGIL Mustafa is interested in fundamental understanding of electronic properties of low dimensional materials. His strengths are in the area of condensed matter, device & materials physics and the development of interdisciplinary research directions and strategies. He has published in Nature Communications, ACS Nano, APL Materials, Physical Review B, Chemical Physics Letters, Journal of Magnetism and Magnetic Materials, and Physica E. Currently he is a Distinguished Foreign Expert in the Institute of Advanced Materials (started in November 2015), Nanjing Tech University and a visiting scientist in NTU Singapore.
Research Interest
Research Interests Low dimensional materials' electrical, optoelectronic, and magnetic properties; strong spin-orbit coupling systems; and light-sensitive 2D materials/biomaterials hybrid structures.
Publications
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3) Bingchen Cao, Xiaonan Shen, Jingzhi Shang, Chunxiao Cong, Weihuang Yang, Mustafa Eginligil*, and Ting Yu*, "Low temperature photoresponse of monolayer tungsten disulphide" APL Materials 2, 116101 (2014).
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2) Jingzhi Shang, Xiaonan Shen, Chunxiao Cong, Namphung Peimyoo, Bingchen Cao, Mustafa Eginligil, and T. Yu*, "Observation of excitonic fine structure in a 2D transition metal dichalcogenide semiconductor" ACS Nano 9(1) 647-655 (2015).
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1) Mustafa Eginligil, Bingchen Cao, Xiaonan Shen, Zilong Wang, Jingzhi Shang, Chunxiao Cong, Cesare Soci, and Ting Yu*, "Dichroic spin-valley photocurrent in monolayer molybdenum disulphide" Nature Communications 6, 7636, (2015).
