Chen Xingbi

Biography

Prof. Chen is graduated from the Tongji University in 1952 and has been working in the University of Electronic Science and Technology of China since 1956. He was a visiting scholar in Ohio university in 1980 and a visiting scholar in UC Berkeley in 1981-1982 doing research on power devices. He was also a visiting professor of the University of Toronto in 1994 and a senior visiting professor of the University of Wales, Swansea in 1995. In 1999, he was elected as an Academician by the Chinese Academy of Sciences. He is now a life senior member of the IEEE. He is also the recipient of the IEEE ISPSD Pioneer Award in 2015. As a senior semiconductor device physicist, he is best known for his invention of the “CB-layer” in 1993, later known as “Super-Junction (SJ)”. In his patent US 5,216,275A, the relationship between the on-resistance in unit area (Ron) and the breakdown voltage (VB) of the SJ-structure was firstly and explicitly presented as Ron∝VB^1.3, a very attractive relationship and a breakthrough to the traditional “Silicon Limit Ron∝VB^2.5”. Also some typical SJ-structures presented firstly in the patent are widely studied now, such as the SJ-structure containing oxide to isolate the p-column from the n-region in its voltage sustaining layer. Up to now, patent US 5,216,275A has been cited by more than 500 patents in the world, and there opened special subjects in several sessions of ISPSD.

Research Interest

Microelectronics and Solid Electronics