Qiandong Zhuang
Professor
Institute of Fundamental and Frontier Sciences - Physics
University of Electronic Science and Technology of China
China
Biography
Q. D. Zhuang gained his Ph.D from the Institute of Semiconductors , Chinese Academy of Sciences in 1999 for research into the Molecular Beam Epitaxy (MBE) growth of low-dimensional compound semiconductors and the applications for infrared optoelectronics. Since then he worked at the Singapore Nanyang Technological University as a Research Fellow to investigate InAs/GaAs quantum dots photodetectors and lasers. In 2001, he joined MBE group at the University of Glasgow to exclusively exploit a new class semiconductor of dilute nitride for telecom VCSELs. During the time at the Univesity of Glasgow, he was also responsible for supplying wide range of high quality epitaxial wafers to commercial customers. He joined the Physics Department at Lancaster University in 2003 where he established the MBE Laboratory and has been leading the MBE-related research activities in the group of Semiconductor Physics and Nanostructures.
Research Interest
Subwavelength Optics and Applications, Functional Nanostructures and Physical Properties, Quantum Optics
Publications
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Fernández-Delgado, N., Herrera, M., Chisholm, M.F., Ahmad Kamarudin, M., Zhuang, Q., Hayne, M., Molina, S.I. 08/2016 In: Journal of Materials Science. 51, 16, p. 7691-7698. 8 p.
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Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots
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InSb-based quantum dot nanostructures for mid-infrared photonic devices Carrington, P.J., Repiso Menendez, E., Lu, Q., Fujita, H., Marshall, A.R.J., Zhuang, Q., Krier, A. 16/09/2016 In: Proceedings of SPIE. 9919
