Division of Materials Physics
Rudjer Boskovic Institute
Personal data: Born near Zadar, Croatia, on July 25, 1944, married; father of two children Employment: R.Boskovic Institute (RBI), Materials Research and Electronics Department, Semiconductors Laboratory, Zagreb, Croatia; RBI is the largest Croatian research centre in natural sciences and science applications (www.irb.hr). Last position: scientific adviser (the highest scientific position). Recent responsibilities: Head of Scientific Council of Physics Department of the R. Boskovic Institute; Head of Semiconductors Laboratory; Principal investigator of the number of scientific projects; mentoring a number of Ph.D., M. Sc. and B. Sc. Thesis, etc.
M. Buljan, I. Bogdanović Radović, U. V. Desnica, M. Ivanda, M. Jakšić,C. Saguy, R, Kalish, I. Djerdj, A. Tonejc, O. Gamulin Implantation conditions for diamond nanocrystals formation in amorphous silica matrix Journal of Applied Physics, 104, Issue 3, 034315-1 - 8 (2008).
D. Ristić,1 M. Ivanda, K. Furić, U. V. Desnica, M. Buljan, M. Montagna, M. Ferrari, A. Chiasera, and Y. Jestin Journal of Applied Physics, 104, 073519-1 - 073519-7 (2008).
Generation of an ordered Ge QD array in an amorphous silica matrix by ion bem irradiation – modeling and structural characterization M. Buljan, I. Bigdanovic-Radovic, M. Karlusic, U.V. Desnica, N. Radić, N. Skukan, G. Dražić, K. M. Ivanda, O. Gamulin, Z. Matej, V. Valeš, J. Grenzer, T.W. Cornelius, H.T. Metzger and V. Holy, Phys. Rev. B 81 (2010), 085321 (2010) [8 pages], DOI: 10.1103/PhysRevB.81.085321.