Martina Luysberg
Scientist
Scientific Staff, Section Leader Semiconductors at Ernst Rus
Ernst Ruska-Centre
Germany
Biography
Dr Martina Luysberg serves as Scientific Staff, Section Leader Semiconductors at Ernst Ruska-Centre (ER-C) and Peter Grünberg Institute (PGI-5). He has expertise in Growth mechanisms and defect formation in nano-scale semiconductors, novel gate oxide materials and spintronic device materials investigated by advanced and in-situ electron microscopy.
Research Interest
Growth mechanisms and defect formation in nano-scale semiconductors, novel gate oxide materials and spintronic device materials investigated by advanced and in-situ electron microscopy.
Publications
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Thomas, R., Ehrhart, P., Roeckerath, M., van Elshocht, S., Rije, E., Luysberg, M., ... & Waser, R. (2007). Liquid injection MOCVD of dysprosium scandate films deposition characteristics and high-k applications. Journal of The Electrochemical Society, 154(7), G147-G154.
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Rieger, T., Luysberg, M., Schäpers, T., Grützmacher, D., & Lepsa, M. I. (2012). Molecular beam epitaxy growth of GaAs/InAs core–shell nanowires and fabrication of InAs nanotubes. Nano letters, 12(11), 5559-5564.
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Apostolopoulos, G., Herfort, J., Däweritz, L., Ploog, K. H., & Luysberg, M. (2000). Reentrant mound formation in GaAs (001) homoepitaxy observed by ex situ atomic force microscopy. Physical review letters, 84(15), 3358.
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Thomas, R., Ehrhart, P., Luysberg, M., Boese, M., Waser, R., Roeckerath, M., ... & Caymax, M. (2006). Dysprosium scandate thin films as an alternate amorphous gate oxide prepared by metal-organic chemical vapor deposition. Applied physics letters, 89(23), 232902.
