Dr. Sundararaman Gopalan
Chairperson
Electronics and Communication, School of Engineering
Amrita Institute of Medical Sciences and Research Centre
India
Biography
Sundar Gopalan received his Bachelor of Technology degree from the Institute of Technology, Banaras Hindu University, Varanasi, India, in May 1995. He completed his M.S. and Ph.D. degrees from the University of Texas at Austin, USA in the area of Microelectronic Engineering in 2002. He worked in International Sematech, a semiconductor research consortium located in Austin, Texas, USA, as a Post-Doc and Process research engineer for two years in the Advanced Gate Stack Engineering Group. There he was involved in studying and designing new gate stack structures for the next generation CMOS Technology. He joined the Department of Electronics and Communication Engineering at Amrita School of Engineering, Amritapuri Campus, India, in August of 2004. He is serving as professor and chairperson of ECE department. He has authored/co-authored more than 42 International publications. He specializes in the areas of Electronic Materials, Semiconductor Devices, VLSI Fabrication, Materials Characterization, Processing and Mechanical Behavior of Materials.
Research Interest
Electronic Materials, Semiconductor Devices, Very-Large-Scale Integration (VLSI) Fabrication
Publications
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N. Alex Jacob, Pillai, V., Nair, S., Harrell, D. Toshio, Delhommer, R., Chen, B., Sanchez, I., Almstrum, V., and Dr. Sundararaman Gopalan, “Low-Cost Remote Patient Monitoring System Based on Reduced Platform Computer Technologyâ€, Telemedicine and e-Health, vol. 17, pp. 536–545, 2011.
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S. Dutta, Ramesh, S., Shankar, B., and Dr. Sundararaman Gopalan, “Effect of PVD process parameters on the quality and reliability of thin (10–30 nm) Al2O3 dielectricsâ€, Applied Nanoscience, vol. 2, pp. 1–6, 2012.
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S. Ramesh, Dutta, S., Shankar, B., and Dr. Sundararaman Gopalan, “Identification of current transport mechanism in Al2O3 thin films for memory applicationsâ€, Applied Nanoscience, vol. 5, pp. 115-123, 2014.