Subhashis Gangopadhyay

Biography

Subhashis Gangopadhyay completed M.Sc. in Physics from Visva Bharati, Santiniketan, W.B. in the year 1997, and worked as a research fellow at the Indian Institute of Technology, Kharagpur for three years. Then, moved to the University of Bremen, Germany as "WissenschaftlicherMitarbeiter"(Scientific Assistant), from where he successfully competed my Ph.D. in experimental solid state physics (2006). He was a postdoctoral research fellow at the Toyota Technological Institute, Nagoya, Japan for half a year. Afterward, and moved to the University of Nottingham, UK, (2007) as postdoctoral research associate. In July 2012, he joined BITS Pilani as an Assistant Professor. He is mainly interested in studying the growth, surface structure, morphology, chemistry and manipulation of various semiconductor and metal surfaces down to atomic scale, using scanning probe microscopy and spectroscopy (STM and AFM). Adsorption of organic molecules on metal/semiconducting surfaces (C60/Si, Porphyrins/Au) and their controlled formation of supra-molecular networks, which can be stabilized via various inter-molecular forces, cover a major part of my recent research.

Research Interest

LEEM) and XPEEM at the Nanospectroscopybeamline, HASYLAB, DESY, Hamburg, Germany, Grazing incidence X-ray diffraction (GIXRD) at the BW1 beamline.