Dhrubes Biswas
Professor
Electronics and Electrical Communication Engg.
Indian Institute of Technology (IIT) Kharagpur
India
Biography
Professor, Electronics & EC Engineering, IIT Kharagpur Senior Member, IEEE Electron Devices Society, Microwave Theory & Techniques Society, Communication Society
Research Interest
RF / Ultra-high Speed GaAs/InP on Si Devices for High-performance Design Wide-Bandgap Compound Semiconductor Heterostructure Devices
Publications
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"InGaP/InGaAs PHEMT with high IP3 for low noise applications," Y.C. Lin, E.Y. Chang, G.J. Chen, H.M. Lee, G.W. Huang, D. Biswas and C.Y. Chang, IEE Electronics Letters, 40, 12, June 2004, pp 777-778.
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"Gold free fully metallized InGaP/GaAs heterojunction bipolar transistor," S.W. Chang, E.Y Chang, Dhrubes Biswas, S.S. Lee, K.S. Chen, C.W. Tseng, T.L. Hsieh and W.C. Wu, Japanese Journal of Applied Physics, 44, 1A, 2005, pp 8-11.
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"Self-assembled In0.22Ga0.78As Quantum Dots Grown on Metamorphic GaAs/Ge/SixGe1-x/Si Substrate," Y. C. Hsieh, E. Y. Chang, G.L. Luo, S. H. Chen, Dhrubes Biswas, S.Y. Wang, C.Y. Chang, in Journal of Applied Physics 100 (6): Art. No. 064502 Sep 15 2006
