Parashram M.shirage

Biography

Dr.Parasharam Shirage received the Ph.D. degree in Physics from the Shivaji University, Kolhapur(India), in 2004. He worked at Korea Electrotechnology Research Institute, Changwon,South Korea for two years (2006-2008). He is the recipient of prestigious JSPS Fellowship from Japan (2006-2008) and worked at National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Japan from 2008-2012. Before joining IIT Indore as the Ramanujan Fellow ( A prestigious fellowship from Govt. of India for brilliant scientists and engineers from all over the world) in July 2013, he was visiting Fellow at Tata Institute of Fundamental Research. Dr. Shirage's research interests include superconductors from materials to mechanism, single crystal growth of advanced materials, novel advanced materials inventions using high pressure and high temperature method, development of facile technique for nano-materials including single layer graphene for energy generation and storage. In these areas, he has published 140 research papers in international and national peer reviewed journals with citations 1684 and h-index -23 at the date of updating the profile. He is reviewer for AIP, APS, ACS, IOP, Elsevier, Springer, etc. journals.

Research Interest

New Superconductors Search, Synthesis and Single Crystal Growth High Pressure High Temperature synthesis technique for search novel advanced materials like superconductors, multiferroics, topological insulators, etc. Isotope effect for Understanding the Basic Mechanism