Sandip Ghosh
Associate Professor
Department of Condensed Matter Physics & Materials Science
Tata Institute of Fundamental Research
India
Biography
Dr. Sandip ghosh is an Associate professor at the Department of Condensed Matter Physics & Materials Science , TIFR. His work focuses on electronic band structure of semiconductor crystals and physical properties that derive from it, using a variety of optical spectroscopy techniques. An understanding of such properties is crucial for their application in electronic and opto-electronic devices. He has worked mainly on group III-V & II-VI semiconductors, with an emphasis on heterostructures which are made using layers of more than one type of semiconductor material. When such heterostructures have nanometer dimensions, it can lead to quantum confinement of the charge carriers (electrons and holes). These heterostructures can be categorized as superlattices, quantum wells, quantum wires and quantum dots depending on the number of dimensions in which the carriers are confined. Their physical properties such as effective bandgap, electronic density of states, phonon spectrum, carrier transport properties, optical polarization sensitivity etc. can be tuned by controlling their physical shape and size.
Research Interest
Optical Spectroscopy of Semiconductors.
Publications
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Saigal N, Ghosh S (2015) H-point exciton transitions in bulk MoS2 Appl. Phys. Lett. 106, 182103.
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Saigal N, Ghosh S (2015) Phonon induced luminescence decay in monolayer MoS2 on SiO2/Si substrates Appl. Phys. Lett. 107, 242103.
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Saigal N, Ghosh S (2016) Evidence for two distinct defect related luminescence features in monolayer MoS2 Appl. Phys. Lett. 109, 122105.