Dr. Vedatrayee Chakraborty
Assistant Professor
Electronics And Communication Engineering
West Bengal University of Technology
India
Biography
Dr. Vedatrayee Chakraborty had a Ph. D. in Photonic Devices based on Gr. IV semiconductors from Institute of Radio Physics and Electronics under University of Calcutta in 2016. She is currently appointed as the assistant professor in ECE. dept. of B. P. Poddar Institute of Management & Technology.
Research Interest
Photonics, Semiconductor devices
Publications
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Ve datrayee Chakraborty, Swagata Roy, Rikmantra Basu, Bratati Mukhopadhyay, P.K.Basu, “ Current Gain and External Quantum Efficiency Modeling of GeSn based Direct Bandgap Multiple Quantum Well Heterojunction Phototransistor" , Opt Quant Electron (2017) 49: 125. doi:10.1007/s11082 - 017 - 0947 - 1 , 4 th March, 2017.
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Vedatrayee Chakraborty, B.Mukhopadhyay and P.K.Basu, “ Effect of Different Loss Mechanisms in SiGeSn Based Mid - infrared Laser†Semiconductors@Springer, vol. 49, No. 6, pp. 836 – 842, 2015.
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Vedatrayee Chakraborty, B.Mukhopadhyay and P.K.Basu, “Study of GeSn/SiGeSn RCE Photodetectors based on Franz - Keldysh Effect and Quantum Confined Stark Effect†Opt Quant Electron@springer, DOI 10.1007/s11082 - 014 - 9998 - 8, 30 July 2014.
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Rikmantra Basu, Vedatrayee Chakraborty, B.Mukhopadhyay and P.K.Basu , “Predicted Performance of Ge/GeSn Hetero - Phototransistors on Si Substrate at 1.55 μm†, Opt Quant Electron@Springer, DOI 10.1007/s11082 - 014 - 9921, 2 nd April,2014.
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Vedatrayee Chakraborty, B.Mukhopadhyay and P.K.Basu,†Performance Prediction of an Electroabsorption Modulator at 1550 nm Using GeSn/SiGeSn Quantum Well Structure,†Physica E@ Elesvier, vol.50,pp.67 - 72,2013.