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Ben Shalom Moshe

Professor
Physics
Tel Aviv University
Israel

Biography

Ben Shalom Moshe is working as professor in School of Physics and Astronomy, Tel Aviv University, Israel. His Research Interests are Combining Josephson super-current and Quantum Hall Effect in graphene, Graphene – based Superconducting Quantum Interference Devices (SQUIDs), Electron’s dissipation and transport in the Hydrodynamic limit.

Research Interest

Interest is focused on probing fundamental physics in layered two-dimensional (2D) hetrostructure and realizing new concepts in solid-state devices towards future technologies. Layered structures are assembled by extracting various one-atom-thick crystals, and then placing them one on top of the other as desired (like LEGO blocks). The intrinsic 2D nature of these materials comes from the strong covalent bonds in the plane versus the weak Van der Waals interactions between the layers. It supports ultimately thin crystals with superb structural, mechanical, electronic, phononic and optical properties as well as extreme flexibility and control over these properties in comparison to traditional 2D systems. Graphene, for example, is the strongest, most stiff and yet the most flexible, thinnest and yet impermeable to other atoms, as well as the best charge and heat conducting material. Hexagonal boron nitride (hBN), another layered materials, is an excellent dielectric (insulator), very strong, chemically inert, and provides an outstanding match to graphene. Among other layered materials one can also find single atom thick superconductors, direct and in-direct semiconductors, and even ferromagnetic crystals. The ability to stack these materials together on the atomic scale and to form nearly perfect interfaces brings up many opportunities and ideas for novel electronic phenomena in innovative device architectures. The assembly and surface characterization of the structures is done in a dedicated laboratory clean room. Design and fabrication of the studied devices is done by advances electron and ion beam lithography in the TAU nano-centre. Measurements of charge transport, heat transport and magnetometery are performed in a temperature range of 400-0.01 K and under magnetic fields up to 14 Tesla.

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