Stefano Frabboni

Biography

Associated Professor-University of Modena and Reggio Emilia since 2005. Coordinator of the Ph. D Course in Physics of the University of Modena and Reggio Emila (2007-2009). Member of the Executive Committee of the National Research centre CNR-Istituto di Nanoscienze-S3 since 2002. Researcher at the University of Modena (1990-2005). Co-author of more than 100 papers (103 ISI,hindex=19) on referred journals, and referee of international research journals.

Research Interest

His research activity is mainly focused on Transmission Electron Microscopy (TEM), radiation damage in ion implanted semiconductors and nanostructure fabrication by ion and electron beam methods. In the field of TEM he has mostly concentrated on the development of non-conventional experimental methods. His most important contributions are the observation of reverse biased p-n junction micro–electric fields by means of Electron holography, the application of Convergent Beam Electron Diffraction to the high spatial resolution characterization of strain and static disorder in crystalline materials. The research activity on the structural modification of electronic materials by ion implantation has been carried out on several silicon based systems the most relevant results have been obtained on the study of Hydrogen and Helium induced cavity formation in Silicon. The nanofabrication activity has been carried out at the dual beam workstation of the CNR-S3 research centre and is mainly focused on electron beam induced deposition of nanowires from metalorganic precursors and nano-gap electrodes fabrication by reactive ion beam milling with FIB. He is presently the scientific responsible of this facility.