Ogihara Chisato
Associate Professor
Graduate School of Science and Engineering Materials Science
Yamaguchi University
Japan
Biography
Degree Obtained/License Doctor (Science) , Physics of Semiconductors(1988) Master (Science) , Solid State Physics(1985) Education: Sophia University , Faculty of Science and Technology, Department of Physics(1983) The University of Tokyo, Graduate School of Science, Physics(1988)
Research Interest
Quantum Devices and Materials Engineering
Publications
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Temperature variation of radiative recombination rate of electron-hole pairs responsible for defect photoluminescence in a-Si:H, Physica Status Solidi C,6,S167-S170(2009)
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Lifetime distribution of photoluminescence and radiative recombination rate of electron-hole pairs in a-Si:H, Physica Status Solidi C,7,662-665(2010)
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Light-induced effects on the radiative recombination rate of electron- hole pairs in a-Si:H, Physica Status Solidi C,8,2792-2795(2011)
