Ahmad Shuhaimi Bin Abu Bakar
SENIOR LECTURER
DEPARTMENT OF PHYSICS
University of Malaya
Malaysia
Biography
Dr Ahmad Shuhaimi graduated Bachelor Degree in Electrical and Computer Engineering (B. Eng.) in 2005, Master Degree (M. Eng.) in Engineering Physics, Electronics and Mechanics (Electronics Major) in 2007, and Doctorate Degree (D. Eng.) in Engineering Physics, Electronics and Mechanics (Electronics Major) in 2010, all from Nagoya Institute of Technology, Japan. His postgraduate research was focused on gallium nitride (GaN) – based semiconductor epitaxy by metal-organic chemical vapor deposition (MOCVD) and device fabrications, especially GaN-based light-emitting diodes (LED) grown on silicon (Si) substrate and GaN-based laser diodes (LD) grown on free-standing GaN substrate. Dr Ahmad Shuhaimi has obtained valuable experience in the realm of epitaxy and device fabrications under supervision of Professor Dr Takashi Egawa (one of the pioneers in gallium nitride epitaxy research). After joining Universiti Malaya in July 2010, Dr Ahmad Shuhaimi has been committed in setting up Malaysia's first MOCVD growth facility at Low Dimensional Materials Research Centre (LDMRC) University of Malaya, and optimizations of device fabrication process through many research grants provided by Ministry of Education (MoE) and others. His group interest is GaN-based epitaxy on polar and non-polar planes on sapphire, silicon and free-standing gallium nitride substrates for light-emission and power electronic devices.
Research Interest
Semiconductor Materials (Gallium Nitride, GaN, Indium Gallium Nitride, InGaN, Aluminum Gallium Nitride, AlGaN, Light Emitting Diode, LED, Laser Diode, LD, Multi-Quantum Well, MQW, Strained-Layer Superlattices, SLS).
Publications
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Amina Benzina, Abdelhadi Lachebi, Ahmad Shuhaimi, Saadah Abdul Rahman, Hamza Abid. 2016. First-principles calculation of Structural, electronic and optoelectronic properties of the cubic Al(x)Ga(y)In(1-x-y)N quaternary alloys matching on AlN substrate, within modified Becke–Johnson (mBJ) exchange potential. Optik. In Press, Accepted Manuscript. (ISI-Indexed)
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Ganesh, V., Alizadeh, M., Shuhaimi, A., Adreen, A., Pandikumar, A., Jayakumar, M., Huang, N.M., Ramesh, R., Baskar, K., and Rahman S.A. (2017). Correlation between indium content in monolithic InGaN/GaN multi quantum well structures on photoelectrochemical activity for water splitting. Journal of Alloys and Compounds 706 (2017) 629-636. (ISI-Indexed)
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Hasan, S.W., Said, S.M., Bakar, A.S.B.A. et al. Optimization of poly(vinylidene fluoride) membranes for enhanced power density of thermally driven electrochemical cells. Journal of Materials Science, (2017), pp 1-11. (ISI-Indexed)
