Dr. G. Yang

Biography

Guangtao Yang was born in Shandong, China, in 1983. He studied Applied Chemistry at the YanTai University in China where he got his bachelor diploma in 2006. From September 2006 to June 2009 he studied in the National Synchrotron Radiation Laboratory which located in the University of Science and Technology of China as a master student. Over there he graduated with a Master of Technology degree in June 2009. The title of his Master thesis was “Building of synchrotron radiation assistant MOCVD system and the deposition of ZnO films on Si substrate”. Subsequently, from October 2009, he joined the Delft University of Technology, where he started his doctoral research in the Photovoltaic Materials and Devices groups. His research focus is on the interfaces study of n-i-p configuration thin-film silicon solar-cells. Since May 2014 he worked at the same group as a researcher focusing on the research on the application of Tunneling Oxide Passivating Contacts (TOPCon) to the  Interdigitated back contact (IBC) c-Si solar-cells. In September 2015, he got his PhD degree. Since then he became a post-doc in the PCMD group. He is now working on 3 TKI national projects: IBChampion, Advanced n-Pasha, and Compass. 

Research Interest

Photovoltaic Materials and Devices