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Nam Donguk

Assistant Professor
School of Electrical & Electronic Engineering
Nanyang Technological University
Singapore

Biography

Dr. Donguk Nam received his Ph.D. (2014) and M.S. (2012) degrees both in Electrical Engineering from Stanford University, and obtained his B.Eng. degree from Korea University (2009). After working as a postdoctoral scholar at Stanford University for one year, he joined Inha University, South Korea, as an Assistant Professor where he led silicon photonics research (SPR) laboratory and advised 11 graduate/undergraduate students from March 2015 to July 2017. In August 2017, he joined the school of EEE at NTU as an Assistant Professor. In summer of 2016, He was awarded a Tan Chin Tuan Exchange Fellowship to visit Nanyang Technological University as an exchange Professor. His work on highly strained group IV photonic devices has been recognized with several invitations to major conferences/journals including the 2014 & 2016 ECS meetings and Photonics Research journal.

Research Interest

- Photonic (phononic) crystal cavity design & experiments - "1 opening for research fellow position" - Silicon/germanium photonics - Optoelectronics - Quantum photonics - Cavity optomechanics - Bandstructure engineering of two dimensional materials - Strain engineering for discovering novel physics

Publications

  • D. Sukhdeo, J. Petykiewicz, S. Gupta, Daeik Kim, Sungdae Woo, Youngmin Kim, J. Vučković, K. Saraswat and D. Nam. (2015). Ge Microdisk with Lithographically-Tunable Strain using CMOS-Compatible Process. Optics Express, 23, 33249.

  • J. Petykiewicz, D. Nam, D. Sukhdeo, S. Gupta, S. Buckley, A. Piggott, J. Vučković and K. Saraswat. (2016). Direct Bandgap Light Emission from Strained Ge Nanowire Coupled with High-Q Optical Cavities. Nano Letters, 16(4), 2168-2173.

  • D. Sukhdeo, Y. Kim, S. Gupta, K. Saraswat, B. Dutt, and D. Nam. (2016). Theoretical Modeling for the Interaction of Tin Alloying With N-Type Doping and Tensile Strain for GeSn Lasers. IEEE Electron Device Letters, 37(10), 1307-1310.

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