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Ng Geok Ing

Director
School of Electrical & Electronic Engineering
Nanyang Technological University
Singapore

Biography

Ng Geok Ing received his Ph.D degree in electrical engineering from the University of Michigan, Ann Arbor in 1990. From 1991 to 1993, he was a Research Fellow at the Centre for Space Terahertz Technology in the University of Michigan, working on microwave/ millimeter-wave semiconductor devices and MMICs. In 1993, he joined TRW Inc. in Space Park, California as a Senior Member of Technical Staff engaging in the R&D work on GaAs and InP-based HEMTs for high frequency low-noise and power MMIC applications. In 1995, he joined the Nanyang Technological University (NTU) Singapore in the School of EEE. In 1996, he was seconded to be the Programme Manager for the III-V MMICs Programme at the Microelectronics Centre in NTU to spearhead the Monolithic Microwave Integrated Circuit (MMIC) development effort in Singapore. From 2005 to 2009, he was appointed the Programme Manager for the MMIC Design Centre at the Temasek Laboratories@NTU (TL@NTU). Since 2013, he is the Cluster Manager of the Microsystems Group at TL. Concurrently, he is also the Director of the Silicon Technologies Centre of Excellence (Si COE) jointly established by the Science and Engineering Research Council (SERC) and NTU. He has authored and co-authored more than 200 international journal and conference papers and delivered invited talks at several international conferences. His current research interests include device physics, fabrication and characterisation of microwave devices with different III-V material (GaN, GaAs, InP) systems for low-noise, power and MMIC applications. In 1990, he was awarded the European Microwave Prize for his work on InP-based heterostructure monolithic amplifiers. In 2007, he was awarded the prestigious Singapore’s Defense Technology Prize for his outstanding technological contributions in MMIC R&D.

Research Interest

evice physics, fabrication and characterisation of microwave devices with different III-V material systems (GaN, GaAs and InP) for low-noise, power and MMIC applications.

Publications

  • S. Arulkumaran,G. I. Ng, S. Vicknesh, W. Hong, K.S. Ang, C. M. Manoj Kumar, K.L. Teo, K. Ranjan. (2013). Demonstration of Submicron-Gate AlGaN/GaN High Electron Mobility Transistors on Silicon with Complementary Metal-Oxide-Semiconductor-Compatible Non-Gold Metal Stack. Applied Physics Express, .

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