Prof Rusli
Associate Professor
School of Electrical & Electronic Engineering
Nanyang Technological University
Singapore
Biography
Dr. Rusli received his B. Eng (1st Class Honours) and M. Eng from the National University of Singapore, and PhD degree in Electrical Engineering from the University of Cambridge, UK. He has been in the area of microelectronics research since 1991. He is currently an Associate Professor at the School of Electrical and Electronic Engineering, Nanyang Technological University. He is a senior member of IEEE and has more than 200 research papers published/presented in international journals and conferences. He was also invited to contribute three chapters in two books.
Research Interest
Growth, characterization and application of amorphous thin films
Publications
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P. Zhao, Rusli, C. L. Zhu and J. H. Xia. (2007). DC characterization of accumulation layer and bulk layer electron mobility in 4H-SiC depletion mode MOSFET. Solid-State Electronics, 51, 1139-1143.
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K. L. Foo, Rusli, M. B. Yu, N. Singh, K. D. Buddharaju, L.Chan, C.M. Ng. (2008). Silicon Nanowires Photodiodes. International Conference on Nanoscience and Nanotechnology, Melbourne.
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Valeri Ligatchev and Rusli.(2008). Dielectric properties and features of defect state distributions in nano-crystalline SiOCH and TaOx. Handbook of Nanoceramics and Their Based NanodevicesAmerican Scientific Publishers, US.
