Dr. Germann studied physics at the University of Stuttgart, Germany, where he received a Ph.D. degree in 1990. His dissertation deals with dry etching of III-V semiconductors for the fabrication of nanostructures and DFB lasers, and with the optical and electrical characterization of dry-etching-induced damage. In 1990, he joined the IBM Research - Zurich as a Research Staff Member to work on the development of semiconductor lasers for optical data communication and storage applications. Since 1994 his work has been focused on the development of process technology for SiON-based planar optical waveguide circuits. From 2003 – 2008 he managed the 'Advanced Functional Materials' group, which explored novel materials for future CMOS generations, such as high-k gate dielectrics and high-mobility semiconductors.