Asen Asenov

Biography

Asen Asenov (FIEEE, FRSE) received his MSc degree in solid state physics from Sofia University, Bulgaria in 1979 and the PhD degree in physics from The Bulgarian Academy of Science in 1989. He has ten years of industrial experience as a head of the Process and Device Modelling Group in Institute of Microelectronics, Sofia, developing one of the first integrated process and device CMOS simulators IMPEDANCE. In 1989–1991 he was a Visiting Professor at the Physics Department of Technical University of Munich, Germany. He joined the Department of Electronics and Electrical Engineering at the University of Glasgow in 1991, and served as a Head of Department in 1999-2003. As a James Watt Professor in Electrical Engineering and a Leader of the Glasgow Device Modelling Group Asenov directs the development of 2D and 3D quantum mechanical, Monte Carlo and classical device simulators and their application in the design of advanced and novel CMOS devices. He has pioneered the simulations of statistical variability in nano-CMOS devices including random dopants, interface roughness and line edge roughness. He has over 550 publications and more than 160 invited talks in the above areas.

Research Interest

(i) development of advanced drift diffusion, Monte Carlo and quantum transport simulations tools focused on atomic scale CMOS statistical variability and reliability; (ii) statistical compact model extraction; (iii) statistical circuit simulations; (iv) development of nano-bio simulation tools.