Iain Thayne
Professor
Department of Engineering
University of Glasgow
United Kingdom
Biography
Iain Thayne received his BSc degree in physics and electronic engineering from The University of Glasgow in 1986. Between 1986 and 1988, I worked as a research scientist at Philips Research Labs in Redhill, Surrey on the realisation of compound semiconductor microwave transistors and integrated circuits. In 1988, I returned to Glasgow as a research assistant in the Nanoelectronics Research Centre and completed a PhD in 1993 for his work on leading performance III-V High Electron Mobility Transistors. Thereafter, I secured a Science and Engineering Research Council Research Fellowship where I developed a range of electronic and optoelectronic device technologies including high sensitivity cryogenic detection electronics . In 1995, I joined the lecturing staff of the Department of Electronics and Electrical Engineering, held an EPSRC Advanced Research Fellowship from 2001 to 2006, and was promoted to Professor of Ultrafast Systems in 2003.
Research Interest
I have research interests in compound semiconductor electronic devices spanning activity in III-V MOSFETs for advanced logic, GaN on Si power electronic devices, and narrow bandgap (InAs and GaSb) based RF devices for low power wireless communications. A common theme of all the device work is the development of "silicon compatible" processing so that the outstanding properties of compound semiconductor materials can be fully exploited using the economies of scale offered from silicon manufacture. in leading performance electronic devices; antennas; and microwave and millimetre-wave integrated circuits - areas in which I have over 200 publications.
Publications
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Fu, Y.-C., Peralagu, U. , Lin, J., Povey, I., Millar, D. A.J., Monaghan, S., Droopad, R., Hurley, P. K. and Thayne, I. G. (2017) The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors. Applied Physics Letters, 110(14), 142905.
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Floros, K., Li, X., Guiney, I., Cho, S.-J., Hemakumara, D., Wallis, D. J., Wasige, E. , Moran, D. A.J., Humphreys, C. J. and Thayne, I. G. (2017) Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt and Ni based gate stacks. Physica Status Solidi A: Applications and Materials Science, 214(8), 1600835.
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Aziz, M., Xie, C., Pusino, V. , Khalid, A. , Steer, M., Thayne, I. G. and Cumming, D. R.S. (2017) Multispectral mid-infrared light emitting diodes on a GaAs substrate. Applied Physics Letters, 111(10), 102102.