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Mehmet Sahiner

Professor
Department of Physics
Seton Hall University
United States of America

Biography

Dr. M. Alper Sahiner received his Ph.D. in Physics from Rutgers University in 1995. After completing his post-doctoral studies in Simon Fraser University, he had worked at the Brookhaven National Laboratory as a beamline scientist between 1997-1999. During 1999-2003 he had worked as a senior scientist at Evans Analytical Group,which is adistinguished worldwide network of surface characterization laboratories. After joining Seton Hall University in 2003, Dr. Sahiner developed a advanced materials synthesis and characterization laboratory. His research interests are in the area of semiconductor materials. He is looking for solutions for the major materials based problems of the semiconductor industry by developing new advanced materials. His research also focuses in developing high-efficiency solar cells as alternative solutions for the world's clean energy generation problem. Specifically, Dr. Sahiner works on the synthesis of thin films of hafnium based higk-k dielectric materials, colossal magnetoresistive (CMR) oxides and photovoltaic (solar cells) systems using pulsed laser deposition techniques. Structural and electrical characterizations of these materials are performed by x-ray diffraction and in-house electrical experimental set-ups. Further structural x-ray characterization experiments are performed at the Brookhaven National Laboratory in Long Island, NY.

Research Interest

Semiconductor materials

Publications

  • • "Local Crystal Structural Modifications in Pulsed Laser Deposited High-K Dielectric Thin Films on Silicon and Germanium", Material Science in Semiconductor Processing, 11(6), 245- 249, October 2009

  • • "Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment", Journal of Vacuum Science and Technology B, 28(1), C1B1- B5, March 2010

  • • "Synchrotron XPS and EXAFS Identification of Chemical State and Crystal Phase Changes of HfO2 Films Doped with Si, N, Al, and La", VLSl Technology Systems and Applications (VLSI-TSA), 26, 82-83; IEEE Xplore Digital Library, June 2010

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