Narsingh Singh

Biography

Post-Doctoral Rensselaer Polytechnic Institute, Troy, NY 1979; Ph.D. Gorakhpur University, India 1977

Research Interest

Dr. N. B. Singh, a Fellow of the American Society of Materials (ASM) International, a Fellow of the Society of Photonics and Instrumentations Engineering (SPIE), a Fellow of the Optical Society of America and a Fellow of the Royal Society of Chemistry is internationally known for his researches on EOIR, Lasers, AO, RF, Microelectronic materials and Chemical, Biological and Radiation detectors. Dr. Singh’s interests center on “Development of Materials, Devices and Subcomponents for Military and commercial Applications” which utilize solidification, physical vapor transport, crystal growth of bulk, thin crystals, nanocubes, nanodots, coatings, device fabrications and characterization. Currently, this research has following foci: Chemical and materials processes: Development of chemical and mechanical processes which involved chemistry, thermodynamics, fluid flow, etching, coatings and metallurgical knowledge. Nanowires based Naño-APDS and Nanoelectronics: Nano-APDs for single photon detections and nanoelectronic for high frequency and low power applications. Dielectric Materials with colossal values for high pulse power: Development of materials with dielectric constant greater than100, 000 and processes to meet the requirements of high energy pulse applications. Radiation Detector Materials:Development of novel class of detectors such as halides and chalcogenides for for radiation detections and organic and organometallic molecules for neutron detection. Novel large area materials for Commercial/Defense Applications; large area (6”) size SiC is essential for commercial and defense applications. Physical vapor deposition (PVD) cannot produce at this stage high quality large size boules of that size. SiC–AlN Wurtzite materials for Commercial and Defense Electronics: GaN is a hexagonal material and requires hexagonal substrates. Laser host materials for high power lasers: Several halides and SiC-AlN has very high thermal conductivity compared to commercial YAG host and can be used for high power lasers. We are developing novel method and composition for high IRCM power applications. AOTF based Hyperspectral Imagers: Practical Mid wave infrared (MWIR) and long wave infrared (LWIR) multi/hyperspectral Acousto-Optic (AO) crystal based imagers using unique and very anisotropic crystals grown by Bridgman and PVD method. NLO Materials for MWIR and LWIR Laser Development: Practical Second harmonic (SHG) and Optical Parametric Oscillation (OPO) laser materials and fabricate by using all common mode of solidification encountered in casting, welding processes and crystal growth. Effort is focused to produce materials for lasers, Missile warning systems, AO based hyperspectral imaging and all electronic beam deflectors. UV Filter Sensors for Missile Warning: UV Sensors for missile defense applications for military and commercial aircrafts using crystallization method. Nanocubes and Nanodots for SWIR and MWIR detectors: Nanocubes and nanodots of PbSe type materials which have great potential for the high temperature detectors. Eutectic, Monotectic and Dendritic Alloys: Solidification behavior of eutectic, monotectic and dendritic alloys for structural applications. Novel approach for Diamond-Al and Diamond-Cu Heat spreader: Developed a novel approach to process materials which produces high conductivity. Microstructure evolution in annealed multi-phase alloys to generate Capacitor and Railgun Materials: Quantitative description of microstructures constitutes the core of this research focus, using stereology and metallography combined with modern image analysis. RF Heterostructure Materials for High Power Applications: Wide band heterostructures of SiC and AlN by PVD for high power applications: Interactions involve fluid-mechanical forces, convective heat transfer, and solutal diffusion fields near solid-liquid and solid-vapor interfaces. Coating Developments (AR, AT and Protective): Coatings for anti-reflection (AR), anti-tamper (AT) and protection applications: Involves design and multi-level coatings for wafer, devices and components. Nano-Engineered Quantum Dot limiters for Laser threat: Surface Plasmon Polaritons Quantum Dot Limiters (SPPs-QDTL) for laser threat using quantum dots. Focal Plane Materials and IR detectors: CdZnTe and high temperature FPA materials such as PbSnTe class of materials. 7” diameter CZT for MCT substrates using unique approach of Northrop Grumman Corporation. MWIR and LWIR Lasers-QPM: Quasiphase materials for Laser IRCM and imaging, EM and Structural applications; Involves domain engineering, bandgap engineering for EO applications and lattice hardening for structural applications. Organic Materials for Substrates and high efficiency NLO Applications: Organics materials are low cost options for substrates and excellent frequency conversion materials for short wavelength infrared (SWIR).