Michael Santos
Industrial and system Engineering
University of Oklahoma
United States of America
Biography
Michael Santos completed his Ph.D. in 1992 from Princeton University
Research Interest
Growth of narrow-gap semiconductors and device applications for these materials. We use molecular beam epitaxy to grow heterostructures for three research efforts: high-mobility and spin- dependent electron transport experiments, mid-infrared interband-cascade devices, and nanostructures for photovoltaic applications. Because the bandgap of InSb is the smallest of all binary III-V compounds, two-dimensional electron systems in InSb quantum wells have a small effective mass, a large g-factor, and strong spin-orbit effects. The room-temperature mobility in these structures is higher than in quantum wells made of any other semiconductor. We are exploring ways to exploit this and other features in devices based on ballistic transport and electron spin. Magneto-transport studies on these materials are being pursued with Sheena Murphy's group and external collaborators. In addition, we are working with Sheena Murphy's group on the search for new materials that exhibit topological-insulator behavior.
Publications
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Tian Z, Jiang Y, Li L, Hinkey RT, Yin Z, Yang RQ, Mishima TD, Santos MB, Johnson MB. InAs-Based Mid-Infrared Interband Cascade Lasers Near 5.3$mu { m m} $. IEEE Journal of Quantum Electronics. 2012 Jul;48(7):915-21. Gaspe CK, Edirisooriya M, Mishima TD, Jayathilaka PD, Doezema RE, Murphy SQ, Santos MB, Tung LC, Wang YJ. Effect of strain and confinement on the effective mass of holes in InSb quantum wells. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 2011 May;29(3):03C110.
