Patrick J. Mccann
Industrial and system Engineering
University of Oklahoma
United States of America
Biography
Patrick J. McCann received his B.S. in engineering physics from UC Berkeley in 1981 and his Ph.D. in electronic materials from MIT in 1990.From 1981 through 1984 he worked for IBM in Burlington, Vermont, where he was on the team that developed the world’s first one megabit DRAM. He has been a faculty member in the School of Electrical and Computer Engineering at the University of Oklahoma since 1990. His research group has published over 100 articles in the fields of IV-VI semiconductor epitaxial crystal growth, laser fabrication, and chemical sensing using mid-infrared laser absorption spectroscopy. Recent accomplishments include demonstration of mid-infrared light emission at room temperature from nanostructured epitaxial layers, demonstration of improved active region heat dissipation from epitaxial layers removed from growth substrates and development of laser spectrometers for exhaled breath analysis.
Research Interest
Semiconductor Laser Fabrication,Tunable Diode Laser Spectrometer Development,Molecular Beam Epitaxial Growth of Semiconductors
Publications
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Jeffers JD, Namjou K, Cai Z, McCann PJ, Olona L. Cross-plane thermal conductivity of a PbSnSe/PbSe superlattice material. Applied Physics Letters. 2011 Jul 25;99(4):041903. McCann PJ, Kamat P, Li Y, Sow A, Wu HZ, Belenky G, Shterengas L, Kim JG, Martinelli R. Optical pumping of IV-VI semiconductor multiple quantum well materials using a GaSb-based laser with emission at λ= 2.5 μ m. Journal of applied physics. 2005 Mar 1;97(5):053103.
